Micron unveils its UFS 4.0 storage tech, it's twice as fast as previous-gen storage
Micron announced its UFS 4.0 mobile storage solution and revealed that it has already shipped qualification samples to âselect global smartphone manufacturers and chipset vendorsâ.
The new tech will be used to manufacture storage in 256GB, 512GB and 1TB capacities. High-volume production will begin in the second half of this year, so it will be a while before the first phones with Micron UFS 4.0 storage arrive.
This storage is built on 232-layer TLC flash (triple-level cells, i.e. storing 3 bits per cell). According to the company, its six-plane NAND architecture enables higher random read throughput. Compared to previous generation storage write bandwidth is 100% higher, read bandwidth is 75% higher.
In more concrete numbers, Micronâs UFS 4.0 storage offers up to 4,300Mbps sequential read speeds and up to 4,000Mbps sequential write speeds. Thatâs higher than Samsungâs UFS 4.0, especially the write rating.
Additionally, the new UFS 4.0 chips are 25% more power efficient and promise 10% lower write latency.