Micron is getting $6.1B funding to expand its DRAM fabs in New York
Micron Technology is the latest recipient of direct funding from the US Department of Commerce under the CHIPS and Science Act. The US-based computer memory and data manufacturer is set to receive a $6.14 billion federal grant to support the expansion of its Dynamic random-access memory (DRAM) fabs in Syracuse, New York. TSMC and Samsung received similar subsidies earlier this month.
Micron’s roadmap plans include investing upwards of $100 billion in the state of New York and creating over 13,000 jobs in the process. The new round of funding is also set to unlock a $25 billion investment in a separate DRAM fab in Boise, Idaho in proximity to Micron’s headquarters and R&D facility. The new investment is part of a broader plan to bring 40% of Micron’s DRAM production to the US over the next two decades. Micron’s leading-edge DRAM chips are currently manufactured in Japan and Taiwan.
